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ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
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Impact Factor : 8.14
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| Paper Title: | The Influence of Temperature on the Body Doping Concentration In A Symmetric Double Gate Nano MOSFET In Quasi-Ballistic Electron Transport |
| Authors Name: | Muhammad Sulaiman Gana , Garba Shehu Musa Galadanci , Tijjani Hassan Darma , Abdussalam Mubarak , Abdulrazak Tijjani |
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IJRTI_183827
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| Published Paper Id: | IJRTI2209011 |
| Published In: | Volume 7 Issue 9, September-2022 |
| DOI: | |
| Abstract: | This paper presents the impact of body doping concentration on the electron transport in a DG-MOSFET using the quasi-ballistic (Semi-classical) model. Numerical simulations of the electronics characteristics such as the average electron velocity, drain current, electron density and sub-band energy profile are analyzed under a range of low, average and high temperatures (50K, 350K and 850K) using NanoMOS 2D device simulator. The result showed that at a lower doping concentration of 1E+04cm^(-2),1E+08cm^(-2),1E+12cm^(-2) and 1E+16cm^(-2) when the temperature increase above 50K the average electron velocity increases as the channel region between the source and the drain decreases. It was observed that the threshold voltage is more sensitive to doping concentration greater than N_d =1E+18cm^(-2) and also more sensitive to the mobility of the electron at high temperature as such the average electron velocity of the doping concentration N_d =1E+19cm^(-2) is relatively constant as the channel length increases above 14nm with an average electron velocity of 4.66E+05m/s. The body doping concentration increase the height of the barrier potential (electron density decrease) at all temperatures and the number of electron entering the channel decreases, this causes a decrease in the On-State current as observed from the average electron velocity. The change in the gate voltage makes the electron inversion stronger when the doping concentration increases resulting in a stronger On-State current. This shows that increases in the doping level of concentration increase the potential profile thereby decreasing the leakage current and increases in the threshold voltage. |
| Keywords: | Double Gate Nano-MOSFET, Doping Concentration, Electron velocity, Electron Density, Sub-Band Energy |
| Cite Article: | "The Influence of Temperature on the Body Doping Concentration In A Symmetric Double Gate Nano MOSFET In Quasi-Ballistic Electron Transport", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.7, Issue 9, page no.86 - 95, September-2022, Available :http://www.ijrti.org/papers/IJRTI2209011.pdf |
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2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
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Published Paper ID: IJRTI2209011
Registration ID:183827
Published In: Volume 7 Issue 9, September-2022
DOI (Digital Object Identifier):
Page No: 86 - 95 Country: Kano, Kano, Nigeria Research Area: Science & Technology Publisher : IJ Publication Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI2209011 Published Paper PDF: https://www.ijrti.org/papers/IJRTI2209011 |
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ISSN: 2456-3315
Impact Factor: 8.14 and ISSN APPROVED,
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