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Abstract-This project examines the implementation of the barrel shifter using 2×1 multiplexer in FINFET technology. The 2×1 mux is further constructed into the 4×1 mux and used in the implementation of the barrel shifter. The functionality is comparable, yet there is difference in terms of power consumption. The techniques that have been studied are PT(pass transistors). Because the maximum and minimum power consumption are controlled, the PT-based technique has holistic power. The multiplexers are constructed at the 45nm CMOS technology node and simulated . CMOS transistors lost their credibility after downscaling above 22nm, which generates undesired short-channel effects, particularly "off-state" leakage current, which raises device's optimum power need. Fin-type FINFETs are a promising nanoscale alternative for bulk CMOS. For the implementation of the barrel shifter, the CMOS is replaced by high performance FINFETs in this project. This paper discuss about the implementation of the barrel shifter using fin type transistors (FINFET) and is compared with the CMOS technology.
Keywords:
CMOS, FINFETS, Multiplexer, Barrel Shifters
Cite Article:
"Design And Analysis of A 4-Bit Low Power Universal Barrel-Shifter Using 2×1 Mux In 16nm Finfet Technology", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.8, Issue 6, page no.734 - 739, June-2023, Available :http://www.ijrti.org/papers/IJRTI2306112.pdf
Downloads:
000205110
ISSN:
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator