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As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise. A short-channel effect is an effect whereby a MOSFET in which the channel length is the same order of magnitude as the depletion-layer widths of the source and drain junction, behaves differently from other MOSFETs. The short-channel effects are attributed to the limitation imposed on electron drift characteristics in the channel, the modification of the threshold voltage due to the shortening channel length. In this paper, a 3-D model of GATE ALL AROUND MOSFET with different gate materials of group III-V (InGaAs, GaAs, InP) is analyzed and comparative study of electrical characteristics of GATE ALL AROUND MOSFETs has been done
Keywords:
GAA MOSFET, Short Channel Effect, Gate leakage, High-k materials, gate.
Cite Article:
"Design and Simulation of group III-V Gate All Around MOSFET", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.1, Issue 3, page no.42-46, December-2016, Available :http://www.ijrti.org/papers/IJRTI1612007.pdf
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000204832
ISSN:
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator