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This work proposed a Double Gate Tunnel Field effect Transistor (DG-TFET) for which the simulations showed significant improvements in threshold voltage, subthreshold swing, ON current (ION) and OFF current (IOFF) compared to conventional MOSFETs. Unlike conventional MOSFETs that rely on thermionic emission, DG-TFETs utilize band-to-band tunneling (BTBT) as the carrier transport mechanism, enabling subthreshold swings below 60 mV/decade and significant reductions in power consumption. Using the Silvaco Atlas 2D simulator, it has been observed that due to scaling of channel thickness from 16 nm down to 8 nm, though there is a compromise in the ON- current, OFF- current for 8 nm thick device improves by 89.59 % compared to 16 nm thick device for VDS = 0.5 V and VGS = 0 V. However, the more thickened device outperforms the less thickened one in terms of ION-IOFF ratio and intrinsic delay.
"Channel Thickness Engineering for Enhanced Digital Performance in Double-Gate Tunnel Field Effect Transistor", International Journal for Research Trends and Innovation (www.ijrti.org), ISSN:2455-2631, Vol.10, Issue 11, page no.a308-a312, November-2025, Available :http://www.ijrti.org/papers/IJRTI2511040.pdf
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2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator