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International Journal for Research Trends and Innovation
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ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
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Impact Factor : 8.14
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| Paper Title: | Design of Tunnel FET and its Performance Characteristics with various Materials |
| Authors Name: | G. Sankaraiah , Ch. Sathyanarayana |
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| Author Reg. ID: |
IJRTI_160025
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| Published Paper Id: | IJRTI1612004 |
| Published In: | Volume 1 Issue 3, December-2016 |
| DOI: | |
| Abstract: | In today’s technological environment, there is a huge demand for devices with low power and low cost storage space. Memories with low power are driving the entire VLSI industry as most of the devices work on remote power supply. Demand of low power becomes the key of VLSI designs rather than high speed, particularly in embedded SRAM’s and caches. The tunneling field effect transistor uses the quantum-mechanical generation of carriers by band-to-band tunneling. Tunneling-FET meets the challenges like low Subthreshold Swing(SS), low supply voltage and lower leakage currents. In particular, in this paper, we designed Tunnel FET with different materials such as Si and SiGe in different regions so as to produce low subthreshold swing, low leakage currents, low supply voltages and comparable IOFF and ION Idealized template devices were used to determine the device unidirectionality, which is inherent to TFETs. TFET with different material is used to investigate the VDD range, in which TFETS may be advantageous when compared to conventional MOSFET. Ambipolarity of TFET was analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art Silicon n-TFET was used to assess the performance gap between the simulation of idealized TFETs and the best experimental implementations with different materials. |
| Keywords: | Tunneling-FET(TFET), subthreshold swing (SS), unidirectionality, leakage current. |
| Cite Article: | "Design of Tunnel FET and its Performance Characteristics with various Materials", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.1, Issue 3, page no.27-31, December-2016, Available :http://www.ijrti.org/papers/IJRTI1612004.pdf |
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| ISSN: |
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
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Published Paper ID: IJRTI1612004
Registration ID:160025
Published In: Volume 1 Issue 3, December-2016
DOI (Digital Object Identifier):
Page No: 27-31 Country: ANANTAPUR DIST, ANDHRA PRADESH, India Research Area: Engineering Publisher : IJ Publication Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI1612004 Published Paper PDF: https://www.ijrti.org/papers/IJRTI1612004 |
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ISSN: 2456-3315
Impact Factor: 8.14 and ISSN APPROVED,
Journal Starting Year (ESTD) : 2016
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