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International Journal for Research Trends and Innovation
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
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Issue: September 2025
Volume 10 | Issue 9
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Impact Factor : 8.14
Issue per Year : 12
Volume Published : 10
Issue Published : 112
Article Submitted : 17586
Article Published : 7621
Total Authors : 20203
Total Reviewer : 740
Total Countries : 135
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Published Paper Details
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| Paper Title: | Power Efficient Precharge Free 6-T Content Addressable Memory |
| Authors Name: | Darshan Hegde , Dr.Kiran V |
| Download E-Certificate: | Download |
| Author Reg. ID: |
IJRTI_184418
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| Published Paper Id: | IJRTI2210099 |
| Published In: | Volume 7 Issue 10, October-2022 |
| DOI: | |
| Abstract: | Recent advancements made in the field of electronics over last few decades lead to unique challenges in system design. The compact device sizes and their capability to process complex inputs at a faster rate attracted many applications. The conventional mechanical systems are being replaced by either electromechanical systems or electronic systems in automotive industry, smart homes, and portable devices etc. Memory will always be integral part of any electronic processing system design. Improvements of memory technology improves overall efficiency generally. Out of many different memories designed from different devices, semiconductor MOS memory is most widely used today. Conventional memories such as Random Access Memory(RAM) or Read Only Memory(ROM) requires more time to search a particular word of data is present or not. Hence Content Addressable Memory (CAM) are designed for fast and parallel searches. This paper reviews different types of such CAM cells based on features. New power efficient pre-charge free CAM is proposed. The performance is compared by simulation in 45nm technology. There is a considerable reduction in power consumption and delay is reduced at the cost of additional transistor. |
| Keywords: | Content Addressable Memory (CAM), MOS, SRAM |
| Cite Article: | "Power Efficient Precharge Free 6-T Content Addressable Memory", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.7, Issue 10, page no.731 - 735, October-2022, Available :http://www.ijrti.org/papers/IJRTI2210099.pdf |
| Downloads: | 000205028 |
| ISSN: |
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
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Published Paper ID: IJRTI2210099
Registration ID:184418
Published In: Volume 7 Issue 10, October-2022
DOI (Digital Object Identifier):
Page No: 731 - 735 Country: Bengaluru, Karnataka, India Research Area: Electronics & Communication Engg. Publisher : IJ Publication Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI2210099 Published Paper PDF: https://www.ijrti.org/papers/IJRTI2210099 |
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ISSN: 2456-3315
Impact Factor: 8.14 and ISSN APPROVED,
Journal Starting Year (ESTD) : 2016
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