 |
International Journal for Research Trends and Innovation
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
Scholarly open access journals, Peer-reviewed, and Refereed Journals, Impact factor 8.14 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool) , Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI)
|
Issue: October 2025
Volume 10 | Issue 10
Review Result and Publication of Paper within : 2-3 days
Click Here For more DetailsFor Authors
Forms / Download
Published Issue Details
Editorial Board
Other IMP Links
Facts & Figure
Impact Factor : 8.14
Issue per Year : 12
Volume Published : 10
Issue Published : 113
Article Submitted : 18365
Article Published : 7814
Total Authors : 20641
Total Reviewer : 756
Total Countries : 142
Indexing Partner
Licence
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
|
Published Paper Details
|
|
| Paper Title: | Impact of Doping on Gas Sensing Properties of Metal Oxide Semiconductor: A Review |
| Authors Name: | Vinayak Vishram Kadam |
| Download E-Certificate: | Download |
| Author Reg. ID: |
IJRTI_188215
|
| Published Paper Id: | IJRTI2310028 |
| Published In: | Volume 8 Issue 10, October-2023 |
| DOI: | |
| Abstract: | The impact of doping on the gas sensing properties of Metal Oxide Semiconductors (MOSs) is studied in this review work. It gives a detailed comparison of several characteristics (sensor response, sensitivity, selectivity, response time, and recovery time) that influence the performance of MOS-based gas sensors. The changes in MOS materials used for gas sensing induced by dopants or impurities are discussed in this paper. Dopants change the microstructure and morphology, electrical characteristics, electronic structure, crystalline lattice, crystallite size, surface area, and band gap of metal oxide semiconductors, hence improving their properties for gas sensing applications. Dopants can cause MOS flaws by producing oxygen vacancies or creating solid solutions in some conditions. These flaws improve the gas sensing properties, which have been briefly discussed. Finally, the current review paper explains the gas sensing mechanism of pure and doped MOSs for oxidising and reducing gases. |
| Keywords: | Doping, Metal Oxide Semiconductors, Crystallite size, Surface area, Sensors. |
| Cite Article: | "Impact of Doping on Gas Sensing Properties of Metal Oxide Semiconductor: A Review", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.8, Issue 10, page no.189 - 196, October-2023, Available :http://www.ijrti.org/papers/IJRTI2310028.pdf |
| Downloads: | 000205083 |
| ISSN: |
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
| Publication Details: |
Published Paper ID: IJRTI2310028
Registration ID:188215
Published In: Volume 8 Issue 10, October-2023
DOI (Digital Object Identifier):
Page No: 189 - 196 Country: -, -, India Research Area: Science & Technology Publisher : IJ Publication Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI2310028 Published Paper PDF: https://www.ijrti.org/papers/IJRTI2310028 |
| Share Article: | |
|
Click Here to Download This Article |
|
| Article Preview | |
|
|
|
Major Indexing from www.ijrti.org
| Google Scholar | ResearcherID Thomson Reuters | Mendeley : reference manager | Academia.edu |
| arXiv.org : cornell university library | Research Gate | CiteSeerX | DOAJ : Directory of Open Access Journals |
| DRJI | Index Copernicus International | Scribd | DocStoc |
ISSN Details
 |
 |
|
ISSN: 2456-3315
Impact Factor: 8.14 and ISSN APPROVED,
Journal Starting Year (ESTD) : 2016
DOI (A digital object identifier)
| Providing A digital object identifier by DOI.ONE How to Get DOI? |
Conference
Open Access License Policy
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Important Details
Join RMS/Earn 300
WhatsApp
Click Here
Click Here
Indexing Partner |
|||
| Copyright © 2025 - All Rights Reserved - IJRTI | |||