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In modern electronic applications, there is a growing requirement for Schottky diode materi-als that can maintain stable performance under varying temperature conditions, independent of other influencing parameters. Accordingly, material selection and fabrication processes must be carefully optimized. Several material systems have been explored for this purpose, including platinum–silicon (Pt–Si), palladium–gallium nitride (Pd–GaN), titanium–silicon carbide (Ti–SiC), gold–germanium (Au–Ge), and silver–indium phosphide (Ag–InP).
Recently, graphene, a two-dimensional semimetal with exceptional electrical and thermal properties, has emerged as a prominent material for Schottky diode fabrication. Graphene–silicon (graphene/Si) Schottky junctions are extensively utilized in applications such as pho-todetectors, communication systems, and solar cells. In this study, a graphene/n-type silicon (graphene/n-Si) junction is fabricated to investigate the electrical characteristics of the Schottky diode. Furthermore, the fabrication methodology and characterization of the graphene–Si Schottky diode are systematically presented.
"Fabrication and Development of 2D Material for Schottky Diode", International Journal for Research Trends and Innovation (www.ijrti.org), ISSN:2456-3315, Vol.11, Issue 4, page no.a824-a831, April-2026, Available :http://www.ijrti.org/papers/IJRTI2604117.pdf
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2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator