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International Journal for Research Trends and Innovation
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ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
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Impact Factor : 8.14

Issue per Year : 12

Volume Published : 8

Issue Published : 80

Article Submitted : 5819

Article Published : 3222

Total Authors : 8187

Total Reviewer : 541

Total Countries : 71

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Paper Title: Design and analysis of SRAM cell with PMOS access transistor
Authors Name: Ayesha Banu , Dr Kiran V
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IJRTI_184432
Published Paper Id: IJRTI2210090
Published In: Volume 7 Issue 10, October-2022
DOI:
Abstract: Devices with low power consumption are essential in the present electronic era of circuit shrinking. Power consumption is one of the difficult variables that has an impact on the design of small devices and high-performance ICs. The typical SRAM cell designs are power-hungry and unimpressive in this new era of quick mobile computing. The power consumption of low power SRAM cell designs has been examined in this study. Conventional 6T SRAM cell, Gated VDD and Stacking based SRAM cell is designed using PMOS access transistors. The design is implemented and analyzed for static power consumption at 45nm technology in Cadence Virtuoso. Gated VDD using PMOS access transistors shows reduced static power when compared to above SRAM cells.
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Cite Article: "Design and analysis of SRAM cell with PMOS access transistor", International Journal of Science & Engineering Development Research (www.ijrti.org), ISSN:2455-2631, Vol.7, Issue 10, page no.661 - 665, October-2022, Available :http://www.ijrti.org/papers/IJRTI2210090.pdf
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ISSN: 2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publication Details: Published Paper ID: IJRTI2210090
Registration ID:184432
Published In: Volume 7 Issue 10, October-2022
DOI (Digital Object Identifier):
Page No: 661 - 665
Country: Bangalore, Karnataka, India
Research Area: Electronics & Communication Engg. 
Publisher : IJ Publication
Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI2210090
Published Paper PDF: https://www.ijrti.org/papers/IJRTI2210090
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ISSN: 2456-3315
Impact Factor: 8.14 and ISSN APPROVED
Journal Starting Year (ESTD) : 2016

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