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Bismuth selenide films are deposited by arrested precipitation technique at optimized preparative parameters using Bi-TEA and Na2SeSO3 as sources of Bi3+ and Se2-. Bi2Se3 is p-type semiconductor and room temperature electrical conductivity is 1.88 ohm-1cm-1.The films are polycrystalline in nature. Optical absorption coefficient revealed a high absorption coefficient, with a direct type of transition. Composition measured by microprobe analysis is close to Bi2Se3.
Keywords:
Thin films; semiconductors; electron microscopy
Cite Article:
"Optostructural and electrical studies on chemically deposited Bi2Se3 thin films", International Journal for Research Trends and Innovation (www.ijrti.org), ISSN:2455-2631, Vol.7, Issue 12, page no.778 - 781, December-2022, Available :http://www.ijrti.org/papers/IJRTI2212115.pdf
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000205268
ISSN:
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator