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International Journal for Research Trends and Innovation
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2456-3315 | Impact factor: 8.14 | ESTD Year: 2016
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Impact Factor : 8.14
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| Paper Title: | Wide band gap chalcogenide semiconductors |
| Authors Name: | Dr. Sudhir Kumar Mishra |
| Download E-Certificate: | Download |
| Author Reg. ID: |
IJRTI_185116
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| Published Paper Id: | IJRTI2212131 |
| Published In: | Volume 7 Issue 12, December-2022 |
| DOI: | http://doi.one/10.1729/Journal.32840 |
| Abstract: | Wide band gap semiconductors are essential for today’s electronic devices and energy applications due to their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous InGa-Zn-O (IGZO) used in displays and solar cells, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. γ-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated, but stand out due to their propensity for p-type doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials—namely IIVIMCh binaries, CuMCh2 chalcopyrites, Cu3MCh4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials—and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors—e.g. photovoltaic and photo electrochemical solar cells, transparent transistors, and light emitting diodes—that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices. |
| Keywords: | Optical transparency, Photoelectrochemical solar cell, Transprest Transistors, Chalcogenides Band gap, Liquid Crystal display, Semiconductors Flourcense. |
| Cite Article: | "Wide band gap chalcogenide semiconductors", International Journal for Research Trends and Innovation (www.ijrti.org), ISSN:2455-2631, Vol.7, Issue 12, page no.873 - 929, December-2022, Available :http://www.ijrti.org/papers/IJRTI2212131.pdf |
| Downloads: | 000205299 |
| ISSN: |
2456-3315 | IMPACT FACTOR: 8.14 Calculated By Google Scholar| ESTD YEAR: 2016 An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.14 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator |
| Publication Details: |
Published Paper ID: IJRTI2212131
Registration ID:185116
Published In: Volume 7 Issue 12, December-2022
DOI (Digital Object Identifier): http://doi.one/10.1729/Journal.32840
Page No: 873 - 929 Country: -, -, - Research Area: Other Publisher : IJ Publication Published Paper URL : https://www.ijrti.org/viewpaperforall?paper=IJRTI2212131 Published Paper PDF: https://www.ijrti.org/papers/IJRTI2212131 |
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ISSN: 2456-3315
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